Test System
Discrete Device High-Speed Testing SystemDiscrete Device Test System QT-6000
QT-6000 test system is applied to test small and medium-sized power triode diode MOS-FET(IGBT) and wafer etc. updated system can cover built-in capacitance(DC+CAP) and Scanbox test.
The characteristics of£º
¡¤ High-speed test, UPH>40K
¡¤ One for two to achieve 100% FT+QA parallel test
¡¤ Advanced capacitor high-speed test program to achieve CAP+DC same-station test
¡¤ Built-in UIS test program to achieve DC+UIS same-station test
¡¤ LCR accurate capacitance test, the minimum test capacitance value is 100fF
Major Technical Parameters
Measurement Accuracy | Current: £¼0.5% Reading + 0.05% FullRange + 1.5nA Capacitance: 0.5% Reading + 0.05% FullRange + 10fF |
Technical indicator | Max Current/Voltage30A /1200V Capacitance Measurement range:0.2-300pF(BIAS voltage range 0~80V,1MHz) LCR Measurement Range£º0.1pF-0.1uF£¨DC Bias£º0-30V, 1MHZ£© |
DPI | 16 bit ADC/DAC |
Waveform | Built-in oscilloscope |
2022-09-22
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2019-03-22
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Add:No.16 Guangming Ave.,New Light Source
Industrial Base,Nanhai National High-tech Zone,
Foshan,Guangdong, China
Tel£º+86 757 83214396
+86 757 82803659/81992331(service)
Add:F-5-13, (The Latitude), Jalan
C180/1, Dataran C180, 43200 Batu 11 Cheras,
Selangor Darul Ehsan
We have developed a close and persistent relationship with our customers, with the increasing of global automation, we will do our utmost to accurately satisfy our customer¡¯s needs and improve the diversity of our products and applications. We will work tirelessly on pursuing stable and reliable product quality, in order to meet our customer¡¯s needs.