Test System
Power Device Testing SystemQT-3102 Thermal Resistance Tester
QT-3102-XX Testing Device types£ºTransistors¡¢Field-Effect Transistors¡¢IGBT¡¢Diodes¡¢optional SCR.
It can be internally integrated QT-4100¡¯s DC testing for high-power built in thermal resistance testing.
Dual Die testing can be achieved through scanbox.
Key Technical Specifications£º
Parameter | Range | Step current/Votage | Accuracy |
Bias Current IE/IDS | 0.01 to 20A/50A | 0.01A | ¡À1%+2mA |
Measurement Current (IM) | 1 to 100mA | 1 mA | 1 to 39 mA |
Gate Voltage (Gate-L) | 1.0 to 20.0V(Fixed initial value of +5v) | 0.1V | ¡À0.5V |
Power time (PT) | Within Bias Power Range 300us to 200ms | 1 us | Crystal |
Delay time (DT) | 10 to 999 us | 1 us | ¡À1 us Crystal |
Upper/Lower Limit | 0 to 9999 mV | 1 mV | / |
0 to 999.9 mV | 0.1mV | / | |
VCB/VDS | 1 to 100V / 200V | 1 V | ¡À0.2% + 0.1V |
• Maximum current and highest voltage depend on the model, with maximum currents of 20A and 50A, and maximum voltages of 100V and 200V, respectively.
• The company reserves the right to revise all technical parameters at any time without prior notice
2022-09-22
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Add:No.16 Guangming Ave.,New Light Source
Industrial Base,Nanhai National High-tech Zone,
Foshan,Guangdong, China
Tel£º+86 757 83214396
+86 757 82803659/81992331(service)
Add:F-5-13, (The Latitude), Jalan
C180/1, Dataran C180, 43200 Batu 11 Cheras,
Selangor Darul Ehsan
We have developed a close and persistent relationship with our customers, with the increasing of global automation, we will do our utmost to accurately satisfy our customer¡¯s needs and improve the diversity of our products and applications. We will work tirelessly on pursuing stable and reliable product quality, in order to meet our customer¡¯s needs.